Changes in Electrical Properties of MOS Transistor Induced by Single 14 MeV Neutron

Category: Research Articles Published: Wednesday, 22 June 2016

Changes in Electrical Properties of MOS Transistor Induced by Single 14 MeV Neutron

Haider F. A1,a), Chee, F. P.1,b), Abu Hassan, H1, Saafie, S.2, Afishah, A.2

1School of Physics and Materials, Faculty of Applied Science, Universiti Teknologi MARA,

Shah Alam, Selangor, Malaysia.

2Physics with Electronic Department, Faculty of Science and Natural Resources, University of Malaysia Sabah, Kota Kinabalu, Sabah, Malaysia.

a)Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.

b)This email address is being protected from spambots. You need JavaScript enabled to view it.

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxidetrapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0×1010 n/cm2 while with an average of 25 mA at minimum fluence of 5.0 ×108 n/cm2. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.

  • Experimental arrangement and measuring system for MOS transistor irradiation (b) The forward transfer characteristic of n-channel depletion type MOS transistor after irradiation with 14-MeV neutrons

Paper has been published in AIP Conference Proceedings

AIP Conf. Proc. 1704, 050015-1–050015-6; doi:10.1063/1.4940111

Funded by Fundamental Research Grant Scheme (FRGS) 2013, Project No.: FRG0318-SG-1/2013, with title “Evaluation on Diffusion of Charge-Carrier in Semiconductor and nanostructure Devices and its dependency on Nuclear Radiation”.

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