Mechanism of Bijunction Semiconductor Device Damage Induced by Heavy Particles

Category: Research Articles Published: Wednesday, 22 June 2016

                                                                                            Mechanism  of  Bijunction  Semiconductor Device Damage Induced by Heavy Particles

Saafie Salleha, Fuei Pien Cheea*, Haider F. Abdul Amirb

aPhysics  with  Electronic  Department,  Faculty  of  Science  and

Natural Resources, University of Malaysia Sabah, Sabah, Malaysia

bSchool  of  Physics  and  Materials,  Faculty  of  Applied  Science,

University of Malaysia Mara, Shah Alam, Selangor, Malaysia

Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.

The physical phenomena associated with the stopping of energetic ions in semiconductor  materials  have  always  been  a  subject  which  receives  great theoretical  and  experimental  interest. Consequently, bombardment of high energy particles and high energy gamma (γ) rays causes potential hazards to these electronic systems. These effects range from degradation of performance to functional failure that can affect the system operations. Such upsets becoming increasingly likely as electronic components are getting more sophisticated  while  decreasing  in  size  and  moves  to  larger integration. In this paper, the penetration of gamma rays, utilizing Cobalt-60 (Co-60)) into bipolar junction transistor (BJT) is being simulated using the program simulation SRIM. From  the  findings,  it  is  observed  that  the  penetration  of  Co-60  ions  into  the simulated BJT leads to production of lattice defects in the form of vacancies, defect clusters and dislocations. These can alter the material parameters and hence the functional properties of the devices.

Research outcome hypotheses for the charge flow in BJT due the irradiation

Paper has been published in Jurnal Teknologi

78:2–2 (2016) 115–120

Funded by Fundamental  Research Grant Scheme (FRGS) 2013, Project No.: FRG0318-SG-1/2013, with title “Evaluation on Diffusion of  ChargeCarrier in Semiconductor and nanostructure Devices and its dependency on Nuclear Radiation”.

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